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Photoemission study of some novel materials: rare earth/transition metal interface, Ba06K04BiO3 and AlPdMn

机译:某些新型材料的光发射研究:稀土/过渡金属界面,Ba06K04BiO3和AlPdMn

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摘要

Synchrotron radiation photoemission spectroscopy and low energy electron diffraction (LEED) are applied to explore several novel materials: (a) Ce epitaxial growth on W (110) surfaces; (b) Eu epitaxial growth on Ta (110) surfaces; (c) Sm epitaxial growth on Ta (110) surfaces; (d) quasicrystalline AlPdMn; (e) superconducting Ba[subscript]1-xK[subscript] xBiO[subscript]3. In the case of rare earth overlayers on transition metal surface, resonance photoemission spectroscopy is used to enhance the 4f features. The metal surface phase transition is investigated on an atomic-scale. In the case of quasicrystalline AlPdMn and superconducting Ba[subscript]1-xK[subscript] xBiO[subscript]3 the electronic structures are investigated by angle-resolved photoemission;We have grown thin Ce films epitaxially on W(110) up to multiple layers. In the first monolayer, a continuous [gamma]-[alpha]-like phase transition is observed. The epitaxial orientation is the Nishiyama-Wassermann type. Above one monolayer the film transforms to normal [gamma] phase Ce with a 30 degree rotational phase transition. The thick film is unusually oriented with Ce (011) parallel to the substrate (110) (Homma-Yang-Schuller orientation);Photoemission and LEED studies of Eu(110) surfaces have successfully determined that the Eu(110) surface exhibits an fcc-bcc-like phase transition. The Eu(110) surface top layer is reconstructed to hexagonal-close-packed plane. This surface phase transition might be similar to the bulk martensitic phase transitions of bcc metals;Combining both photoemission and LEED observations we find a Sm surface divalent-to-trivalent phase transition occurred on the Ta(110) substrate. At submonolayer coverage the surface is divalent with no ordered overlayer structure. The single monolayer Sm overlayer transfers from divalent to trivalent and the structure is ordered hexagonal. The lattice is expanded 6% relative to the ideal close-packed Sm(0001) surface. The second monolayer is divalent and this top layer is reconstructed. The reconstruction of the surface top layer results a 5 x 5 LEED pattern;The angular-resolved energy distributions for photoelectrons emitted from the fivefold surface of single crystal icosahedral AlPdMn are presented. A quasi-periodic upward dispersion of 300 meV of a spectral feature at 2.3 eV binding energy is observed with 13 eV photon energy. A distinct pseudo gap feature is observed with a density of states near the Fermi level that decreases as a power Law; LEED studies confirm the existence of quasicrystalline order at the surface;The electronic structure of Ba[subscript]0.6K[subscript]0.4BiO[subscript]3 is investigated by angle-resolved photoemission on a single crystal (001) surface. The results show metallic character with a featureless low density of states within 1.5 eV of the Fermi level. Most of the DOS is located between 1.5 and 5.5 eV binding energy below E[subscript] F. Three flat bandlike features in between about 2.6 eV and 5.0 eV are observed. A fourth weak feature around 6.6 eV is also identified. Compared with the LAPW band structure calculation, there is a rigid downward shift of the complete band structure by an energy of order 1 eV and K doping might introduce disorder features.
机译:同步辐射光发射光谱法和低能电子衍射法(LEED)被用于探索几种新型材料:(a)Ce在W(110)表面上外延生长; (b)Ta(110)表面上的Eu外延生长; (c)Ta(110)表面上的Sm外延生长; (d)准晶AlPdMn; (e)超导Ba [下标] 1-xK [下标] xBiO [下标] 3。在过渡金属表面上的稀土覆盖层的情况下,使用共振光发射光谱法来增强4f特性。在原子尺度上研究了金属表面的相变。在准晶AlPdMn和超导Ba [下标1-xK [下标] xBiO [下标] 3的情况下,通过角分辨光发射研究了电子结构;我们在W(110)上外延生长了多层Ce薄膜,直至多层。在第一单层中,观察到连续的γ-α样相变。外延取向是Nishiyama-Wassermann型。在一个单层之上,膜以30度的旋转相变转变为正γ相Ce。厚膜的Ce(011)平行于基材(110)取向异常(Homma-Yang-Schuller取向); Eu(110)表面的光发射和LEED研究已成功确定Eu(110)表面表现出fcc -bcc样的相变。 Eu(110)表面顶层被重建为六角密堆积平面。这种表面相变可能类似于bcc金属的整体马氏体相变;结合光发射和LEED观察,我们发现Ta(110)衬底上发生了Sm表面二价至三价相变。在亚单层覆盖下,表面是二价的,没有有序的覆盖层结构。单个单层Sm覆盖层从二价转移到三价,结构呈六边形有序。相对于理想的密排Sm(0001)表面,晶格扩展了6%。第二个单层是二价的,该顶层被重建。表面顶层的重建产生5 x 5 LEED图案;给出了从单晶二十面体AlPdMn的五重表面发射的光电子的角分辨能量分布。在13 eV光子能量下,观察到在2.3 eV结合能下300 meV光谱特征的准周期性向上分散。观察到明显的伪间隙特征,其费米能级附近的态密度随幂律而减小; LEED研究证实了表面存在准晶序;通过单晶(001)表面上的角度分辨光发射研究了Ba [下标] 0.6K [下标] 0.4BiO [下标] 3的电子结构。结果表明,在费米能级1.5 eV内,金属特征具有无特征的低态密度。大部分DOS位于E [F]以下1.5至5.5 eV的结合能之间。观察到大约2.6 eV至5.0 eV之间的三个平坦的带状特征。还确定了6.6 eV附近的第四个弱点。与LAPW带结构计算相比,整个带结构以1 eV量级的能量存在刚性向下移动,K掺杂可能会引入无序特征。

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  • 作者

    Wu, Xilin;

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  • 年度 1994
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  • 原文格式 PDF
  • 正文语种 en
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